RD100HHF1 Mitsubishi Electric RF Power MOSFET Data Sheet
Download PDF datasheet for Mitsubishi Electric RD100HHF1 (100W @ 30MHz) Silicon MOSFET Power Transistor (EN) 7 pages Rev.1 2003 zip
Description
This PDF datasheet is for the Mitsubishi RD100HHF1 Power Transistor.
About the Item
Mitsubishi Electric RD100HHF1 100W @ 30MHz Silicon MOSFET Power Transistor
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES:
– High power and High Gain:
Pout>100W, Gp>11.5dB @ Vdd=12.5V, f=30MHz
– High Efficiency: 60% typ. on HF Band
APPLICATION:
For output stage of high power amplifiers in HF Band mobile radio sets.
(PDF) DATASHEET (ENGLISH)
SUMMARY OF CONTENTS
– ABSOLUTE MAXIMUM RATINGS
– RD100HHF1 PINOUT
– ELECTRICAL CHARACTERISTICS
– TYPICAL CHARACTERISTICS
– TEST CIRCUIT
– INPUT/OUTPUT IMPEDANCE vs. FREQUENCY CHARACTERISTICS
– RD100HHF1 S-PARAMETER DATA
Why download the Datasheet?
This datasheet provides all the information from Mitsubishi about the RD100HHF1 Power Transistor, as detailed in the table of contents. Reading it completely will address most questions you might have. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.
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