BF960 Telefunken Dual Gate N-channel MOS field effect transistor Data Sheet
Download PDF datasheet for Telefunken BF960 Dual Gate N-channel MOS field effect transistor (EN) 10 pages zip
Description
This PDF datasheet is for the Telefunken BF960 Dual Gate N-channel MOS field effect transistor.
About the Item
Telefunken Electronic BF960 Dual Gate N-channel MOS field effect transistor
Applications: Input- and Mixerstages especially for UHF TV-tuners up to 900 MHz
FEATURES:
– Integrated Gate protection diodes
– High cross modulation performance
– Low noise figure
– High AGC-range
– Low feedback capacitance
– Low input capacitance
(PDF) DATASHEET (ENGLISH)
SUMMARY OF CONTENTS
MAXIMUM RATINGS
– Drain-source voltage
– Drain current
– Gate-source peak current
– Storage temperature range
– Channel temperature
– Total power dissipation
THERMAL RESISTANCE
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE
TEST CIRCUIT FOR POWER GAIN, NOISE FIGURE, AND CROSS MODULATION
TEST CIRCUIT FOR MIXER GAIN
Why download the Datasheet?
This datasheet provides all the information from Telefunken Electronic about the BF960 transistor, as detailed in the table of contents. Reading it completely will address most questions you might have. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.
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