BF960 Siemens Dual Gate N-channel MOS field effect transistor Data Sheet
Download PDF datasheet for Siemens BF960 Dual Gate N-channel MOS field effect transistor (EN) 12 pages zip
Description
This PDF datasheet is for the Siemens BF960 Dual Gate N-channel MOS field effect transistor.
About the Item
Siemens BF960 Dual Gate N-channel MOS field effect transistor
BF 960 is an ion-implanted dual gate N-channel MOS field effect transistor of the depletion type with integrated gate-protection diodes in a plastic package similar to TO 120, (50 B4 DIN 41 867). The source lead is internally connected with the substrate.
The BR 860 tetrode is particularly suitable for use in TV UHF input stages and mixers as well as for universal applications throughout the frequency range between 200 MHz and 1 GHz.
(PDF) DATASHEET (ENGLISH)
SUMMARY OF CONTENTS
MAXIMUM RATINGS
– Drain-source voltage
– Drain current
– Gate-source peak current
– Storage temperature range
– Channel temperature
– Total power dissipation
THERMAL RESISTANCE
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE
TEST CIRCUIT FOR POWER GAIN, NOISE FIGURE, AND CROSS MODULATION
TEST CIRCUIT FOR MIXER GAIN
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This datasheet provides all the information from Siemens about the BF960 transistor, as detailed in the table of contents. Reading it completely will address most questions you might have. You can download and save it for offline use, including viewing it on your device or printing it for your convenience if you prefer a paper version.
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