IRF540NL International Rectifier 100V 33A Power MOSFET Data Sheet
Download PDF datasheet for International Rectifier IRF540NL 100V 33A HEXFET TO-262 Power MOSFET (EN) 10 pages PD-91342 2002 zip
Description
This PDF datasheet is for the International Rectifier IRF540NL Power MOSFET.
About the Item
International Rectifier IRF540NL 100V 33A HEXFET TO-262 Power MOSFET
BRIEF DESCRIPTION
– Advanced Process Technology
– Ultra Low On-Resistance
– Dynamic dv/dt Rating
– 175 deg C Operating Temperature
– Fast Switching
– Fully Avalanche Rated
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The through-hole version (IRF540NL) is available for low profile applications.
(PDF) DATASHEET (ENGLISH)
SUMMARY OF CONTENTS
– Absolute Maximum Ratings
– Internal Schematic Diagram
– IRF540NL pinout
– Thermal Resistance
– Electrical Characteristics
– Source-Drain Ratings and Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
– Peak Diode Recovery dv/dt Test Circuit
Fig 14. For N-channel HEXFET power MOSFETs
– Package Outline
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